发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To suppress operation trouble of a switching element and a circuit due to a leakage current flowing to a semiconductor substrate side. SOLUTION: This semiconductor integrated circuit 50 is provided with: a reference power source 1; a leakage current canceling circuit 2; an amplifier circuit 3; an NPN transistor NT1; a resistor R1; a resistor R2; an external terminal Pad1; and an external terminal Pad2. The NPN transistor NT1 and the resistor R2 are electrostatic protection elements. The leakage current canceling circuit 2 is provided with PNP transistors PT1-3, an NPN transistor NT2, an NPN transistor NT3, and a resistor R3. The NPN transistor NT3 and the resistor R3 are replica electrostatic protection elements. The PNP transistors PT1-3 and the NPN transistor NT2 function as a current supply circuit part, supply a leakage current flowing to the replica electrostatic protection element in high-temperature operation to the NPN transistor Nt1 side as a turned current, and suppresses voltage drop on the collector side by a leakage current of the electrostatic protection element. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009170589(A) 申请公布日期 2009.07.30
申请号 JP20080005686 申请日期 2008.01.15
申请人 TOSHIBA CORP;TOSHIBA MICROELECTRONICS CORP 发明人 OKAMURA TAKASHI
分类号 H01L21/822;H01L27/04;H03K19/003 主分类号 H01L21/822
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