发明名称 |
INWARD DIELECTRIC SPACERS FOR REPLACEMENT GATE INTEGRATION SCHEME |
摘要 |
Inward dielectric spacers for a replacement gate integration scheme are described. A semiconductor device is fabricated by first providing a substrate having thereon a placeholder gate electrode disposed in a dielectric layer. The placeholder gate electrode is removed to from a trench in the dielectric layer. A pair of dielectric spacers is then formed adjacent to the sidewalls of the trench. Finally, a gate electrode is formed in the trench and adjacent to the pair of dielectric layers.
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申请公布号 |
US2009189201(A1) |
申请公布日期 |
2009.07.30 |
申请号 |
US20080019538 |
申请日期 |
2008.01.24 |
申请人 |
CHANG CHORNG-PING;WOOD BINGXI SUN |
发明人 |
CHANG CHORNG-PING;WOOD BINGXI SUN |
分类号 |
H01L21/44;H01L29/78 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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