发明名称 |
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND TEST METHOD THEREOF |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device improving yield by a test mode for switchably setting the number of allowable defective bits. <P>SOLUTION: The nonvolatile semiconductor storage device including a test circuit includes: an expected value register for holding an expected value; a comparator circuit for detecting matching of data for each transfer unit of test read data and the expected value of the expected value register for each bit; a first decision circuit having a first deciding gate section for deciding a defect of one bit or more in the transfer unit as fail based on the comparison result and a second deciding gate section for deciding a defect of two bits or more in the transfer unit as fail; a second decision circuit for deciding the defect of one bit or less in the transfer unit as fail based on outputs of the first and second deciding gate sections; and a selector for selecting either one of output of the first deciding gate section of the first decision circuit or output of the second decision circuit. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2009170026(A) |
申请公布日期 |
2009.07.30 |
申请号 |
JP20080006484 |
申请日期 |
2008.01.16 |
申请人 |
TOSHIBA CORP |
发明人 |
SHIRAKAWA MASANOBU;FUKUDA YASUYUKI;HORIKAWA HIDEO |
分类号 |
G11C29/12;G11C16/02;G11C16/06;G11C29/04 |
主分类号 |
G11C29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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