| 摘要 |
PROBLEM TO BE SOLVED: To solve problems wherein a negative electrode is damaged since the negative electrode is exposed to an etching atmosphere when an organic light-emitting layer of an organic EL device is formed by a spin coating method and an unnecessary section of the organic light-emitting layer is etched by using the negative electrode as a mask, especially, when a top emission type organic EL element is formed, it is necessary to make the negative electrode thin in order to secure transparency of the negative electrode, and electrical characteristics are deteriorated when the negative electrode is damaged to ensue uneven light emission. SOLUTION: The negative electrode 108 is covered by a protection layer 110 using ZnO or the like for shielding UV light or a third electrode 109, etching is carried out by using the protection layer 110 and the third electrode 109 as a mask. A light-transmitting property of the protection layer 110 is not damaged even though the protection layer 110 is formed to be thick since the ZnO is optically transparent. The third electrode 109 can be arranged without reducing the light extraction efficiency by forming the third electrode 109 at the outside of a light-emitting range. Further, influence to the organic light-emitting layer 107 caused by UV light generated with plasma etching treatment can be restrained by blocking the UV light. COPYRIGHT: (C)2009,JPO&INPIT
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