| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a surface-emitting semiconductor laser that can oscillate in a single lateral mode and has a low threshold current and low element resistance with high yield. SOLUTION: The surface-emitting semiconductor laser has a lower multilayer film reflecting mirror, an n-type contact layer, an active layer, a p-type contact layer, and an upper multilayer film reflecting mirror. In a lowermost layer in a multilayer film of the upper multilayer film reflecting mirror, a two-dimensional hole array is formed which includes a plurality of holes arranged periodically two-dimensionally. The multilayer film of the upper multilayer film reflecting mirror is laminated thereupon and the shape of the two-dimensional hole array is partially retained to obtain a two-dimensional distribution of periodical refractive indexes. The two-dimensional distribution of refractive indexes serves as a clad for a dot defect in the center where no hole is formed to confine light in the dot defect. COPYRIGHT: (C)2009,JPO&INPIT
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