ANISOTROPIC STRESS GENERATION BY STRESS-GENERATING LINERS HAVING A SUBLITHOGRAPHIC WIDTH

摘要

A protruding structure having a linear edge is formed on a substrate (8). The protruding structure may be a gate line of a field effect transistor. A stress-generating liner is deposited on the substrate (8). A non-photosensitive self-assembling block copolymer layer containing at least two immiscible polymeric block components is deposited on the stress-generating liner (50), and is annealed to allow phase separation of immiscible components. The polymeric resist is developed to remove at least one of the at least two polymeric block components, which formed a pattern of nested lines due to the linear edge (41) of the protruding structure. Linear nanoscale stripes (50) are formed in the polymeric resist which is self-aligning and self- assembled. The stress-generating layer is patterned into linear stress-generating stripes having a sub lithographic width. The linear stress-generating stripes (50) provide a predominantly uniaxial stress along their lengthwise direction, providing an anisotropic stress to an underlying semiconductor device.