| 摘要 |
<p>Disclosed is a resin for chemically amplified photoresists, which is obtained by reacting a polymer compound (A) having at least both repeating structure units represented by general formulae (I) and (II) (wherein R1, R2, R5 and R6 respectively represent a hydrogen atom or the like; R3, R4, R7 and R8 respectively represent a single bond, a hydrogen atom or an organic group having 1-20 carbon atoms; and m, n, p and q respectively represent an integer of 0-3, provided that m and n are not 0 at the same time, and p and q are not 0 at the same time) with a compound (B) represented by general formula (III) (wherein R9 represents a hydrogen atom or an alkyl group having 1-6 carbon atoms; X represents an organic group having 1-20 carbon atoms; and k represents an integer of 2-4) in the presence of a catalyst. The resin for chemically amplified photoresists enables formation of a very fine, uniform pattern during production of a semiconductor.</p> |
