| 摘要 |
<p>The invention relates to a process for manufacturing a solar cell by using a monocrystalline silicon substrate. According to the invention, the process consists in manufacturing a Czochralsky-type substrate silicon wafers (1), said substrate exhibiting a resistance of 1 ... 2 ohm x cm, orientation <100>, till the thickness of the oxide (2) reaches 1.8 nium, at a temperature of 1,000A C and for 300 min/vapours, followed by the removal of the oxide from the wafers back side by means of photolithographic process, and then the wafers are enriched with boron from a solid source at a temperature of 1,110A C for 20 min/source, in order to obtain a protection oxide (3) with a thickness of 0.6 nium, followed by the application of a photolithographic process for texturing the wafer front side, obtained by silicon etching through the oxide masking layer, by using the "honeycomb-like array" topography, at the end of the etching, the oxide used as masking layer being lifted, leaving the active area free, followed by forming the junction n+ (5) in the active area carried out by a prediffusion from liquid source of POCl3 at a temperature of 1,000A C for 10 min/vapours, a junction of 0.8 nium, a V/I ratio = 0.5 ohm and an anti-reflex oxide (6) of 95 mium being obtained.</p> |
