| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a wiring substrate capable of further improving the bonding strength of a land and a contact member more than before. <P>SOLUTION: The wiring substrate 1 of the semiconductor device 3 has a base material 13, a solder resist 21b provided on the base material 13, a land 9 and wiring 25. The solder resist 21b and the land 9 are not in contact, and the end 26 of the wiring 25 faces the land 9 and provided separately in a state that a solder ball 11 is not provided. Thus, a gap 31 is formed between the land 9 and the end 26, and the land 9 forms a complete NSMD structure. When the solder ball 11 is provided on the land 9, the solder ball 11 covers the end 26, and the land 9 and fills the gap 31, and thus the end 26 and the land 9 are electrically connected. <P>COPYRIGHT: (C)2009,JPO&INPIT |
