发明名称 POSITIVE RESIST MATERIAL AND PATTERN FORMING METHOD USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist material that is highly sensitive, has high-resolution, has both a chemical amplification function and a non-chemical amplification function, and is suitable as a material for forming a fine pattern for making a VLSI or a photomask. <P>SOLUTION: The positive resist material contains a high-molecular compound having a repeating unit of (a), (b-1) or (b-2) in the general formula (1). <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009169406(A) 申请公布日期 2009.07.30
申请号 JP20080316443 申请日期 2008.12.12
申请人 SHIN ETSU CHEM CO LTD 发明人 HATAKEYAMA JUN;TACHIBANA SEIICHIRO;OSAWA YOICHI
分类号 G03F7/039;C08F212/14;C08F220/18;C08F220/30;G03F7/004;H01L21/027 主分类号 G03F7/039
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