| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which emits low-coherence light having a center wavelength band of 0.90 to 1.15μm, formation of a wide-band quantum well layer and formation of an upper clad layer of high crystal quality being compatibly achieved without removing a mask for selective growth. SOLUTION: Disclosed is the semiconductor light emitting element 1 which emits low-coherence light having the center wavelength band of 0.90 to 1.15μm and has a GaAs substrate 11 and an InGaAs quantum well layer 15, the semiconductor light emitting element being characterized in that the InGaAs quantum well layer 15 is formed at a growth temperature of≤600°C by performing selective growth, and an InGaP upper clad layer 17 is formed at a growth temperature of≥600°C without removing the mask for selective growth. COPYRIGHT: (C)2009,JPO&INPIT
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