| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser that ensures the reliability by allowing the reflection factor of a coating film to be within 3-13% and by preventing the coating film from being peeled off. SOLUTION: In the GaN based semiconductor laser where the coating film is formed on a front end surface from which laser light is emitted, the coating film includes a first insulating film adjacent to the front end surface and second insulating film formed on the first insulating film. The optical film thickness of the second insulating film is uneven number multiples ofλ/4 to a wavelengthλof the laser light of the semiconductor laser. The adhesiveness of the first insulating film to GaN is stronger than the second insulating film. The refractive index of the second insulating film is 2-2.3, the thickness of the first insulating film being 10 nm or less. The first insulating film is comprised of an oxide film of stoichiometric composition. COPYRIGHT: (C)2009,JPO&INPIT
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