| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with excellent resistance for electrical transitional phenomenon such as electrostatic discharge or the like. SOLUTION: The semiconductor device includes a first active layer of the first conductivity type, a second active layer of the second conductivity type, a base layer of the second conductivity type in contact with the second active layer provided on the first active layer, a base contact region of the second conductivity type provided on the surface layer of the base layer, a source region of the first conductivity type provided on the surface layer of the base layer, a drain region of the first conductivity type provided on the surface layer of the second active layer isolated from the source region, a drift region of the first conductivity type provided on the surface layer of the second active layer in contact with the drain region, a gate electrode provided opposed to the surface between the source region and the drift region in the second active layer, a barrier layer as the barrier for movement of electrons provided between the source region and the drift region, a drain electrode connected to the drain region, and a source electrode connected to the source region and the base contact region. COPYRIGHT: (C)2009,JPO&INPIT
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