| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique whereby a reverse conducting type semiconductor device reduces the regular loss of its diode element region without degrading the recovery characteristic of its diode element region. <P>SOLUTION: In a reverse conducting type semiconductor device B1 having IGBT element regions J1 and diode element regions J2 mixed with each other in a single semiconductor substrate 2, a length whereby each second trench gate electrode TG2 of each diode element region J2 protrudes from its anode layer 50 is longer than a length whereby each first trench gate electrode TG1 of each IGBT element region J1 protrudes from its body layer 30. <P>COPYRIGHT: (C)2009,JPO&INPIT |
