| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor storage device and a semiconductor storage device, capable of obtaining a memory cell with a smaller chip area than before and with high reliability. SOLUTION: On the surface of a semiconductor substrate 1 of a logic region 200, a substrate contact impurity layer 3 is formed. A lower electrode 11a of a memory cell capacitor is formed in an interlayer insulating film 9 in a DRAM region 100. In the interlayer insulating film 9 in the logic region 200, a first conductor pattern 11b to be connected to the impurity layer 3 is formed. An insulating film 12 is formed on the lower electrode 11a and the conductor pattern 11b, and by processing the insulating film 12, a capacitance insulating film 12a is formed on the lower electrode 11a. Then, a conductive film 14 is formed on the semiconductor substrate 1, on which the capacitance insulating film 12a is formed and by processing the conductive film 14, a second conductor pattern 14b arranged on an upper electrode 14a and the first conductor pattern 11b of the memory cell capacitor is formed. COPYRIGHT: (C)2009,JPO&INPIT
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