发明名称 ATOMIC LAYER GROWING APPARATUS AND THIN FILM FORMING METHOD
摘要 <p>An antenna array for generating plasma by using an oxide gas and a substrate stage for placing a substrate are arranged in a film forming container. An antenna element is provided by coating a bar-like antenna main body with a dielectric material, and the antenna array is configured by arranging a plurality of antenna elements in parallel to each other. Furthermore, the antenna array is arranged in a space in the upstream in a gas flow direction of the oxide gas supplied to the substrate stage from a supply port formed on the side wall of the film forming container, compared with a position where the substrate is placed on the substrate stage.</p>
申请公布号 WO2009093459(A1) 申请公布日期 2009.07.30
申请号 WO2009JP00240 申请日期 2009.01.22
申请人 MITSUI ENGINEERING & SHIPBUILDING CO., LTD.;MURATA, KAZUTOSHI;WASHIO, KEISUKE 发明人 MURATA, KAZUTOSHI;WASHIO, KEISUKE
分类号 H01L21/31;C23C16/455;C23C16/509;H05H1/46 主分类号 H01L21/31
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