发明名称 PLASMA PROCESSING APPARATUS AND METHOD OF MANUFACTURING PLASMA PROCESSSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which has a long life and hardly generates dust. SOLUTION: The plasma processing apparatus 1 has a protection member 14 in contact with plasma. A protection layer 18 containing yttria as a main component is exposed on a surface of the protection member 14. The protection layer 18 is not etched in plasma and a base 16 is protected. A base layer 17 is disposed between the protection layer 18 and the base 16. A base material constituting the base layer 17 has a thermal expansion coefficient intermediate between yttria and aluminum, and accordingly even if thermal expansion or thermal contraction occurs, the protection layer 18 will not be detached from the base 16. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009170850(A) 申请公布日期 2009.07.30
申请号 JP20080010496 申请日期 2008.01.21
申请人 ULVAC JAPAN LTD 发明人 TAKEI HIDEO;IKEDA SATOSHI;KIKUCHI MASASHI;OGATA HIDEYUKI
分类号 H01L21/3065;H01L21/31 主分类号 H01L21/3065
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