发明名称 MANUFACTURING METHOD AND SUBSTRATE, OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, and a substrate, in which wire distortion or mold resin omitting is avoided by inhibiting warping or bending of the substrate. SOLUTION: The manufacturing method of a semiconductor device includes processes of: preparing a substrate having a product region 2 in which a plurality of semiconductor devices are mounted, and a perimeter region 3 which is arranged in the perimeter of the product region 2 and in which a plurality of hole portions 4 are formed whose inner wall surface has first thermoplastic resin 5; arranging the substrate between a first die and a second die constituting a mold, and inserting a plurality of pins 6 provided in the first die or the second die into the plurality of hole portions 4; clamping the perimeter region 3 with the first die and the second die; filling with a molten second resin 7 a cavity formed by the first die and the second die, and sealing a plurality of semiconductor devices; and hardening the molten second resin 7 and thereafter cutting the substrate and the second resin 7 for each semiconductor device. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009170744(A) 申请公布日期 2009.07.30
申请号 JP20080008752 申请日期 2008.01.18
申请人 FUJITSU MICROELECTRONICS LTD 发明人 NAKASEKO SHINYA;NARUSAWA YOSHIAKI;AOKI HIROSHI
分类号 H01L21/56 主分类号 H01L21/56
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