| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can reduce variations in characteristics without increasing an occupied area, and to provide a manufacturing method for such a semiconductor device. SOLUTION: After a gate oxide film 3 is formed on the upper layer of a low-density P-type semiconductor substrate 1, a P-type gate electrode 4 is formed on the upper layer of the gate oxide film 3. Thereafter, an N-type impurity ion is implanted using the gate oxide film 3 and the gate electrode 4 as the mask, so that a plurality of N-type source-drain diffusion regions 6 are formed separately. Subsequently, after interlayer insulating films 7 are formed on the upper layers of the semiconductor substrate 1 and the gate electrode 4, a plurality of contact plugs 8 are formed to secure the electrical connection of the source-drain diffusion regions 6 with the gate electrode 4. Thereafter, to obtain a desired threshold voltage, a positive charge is injected into the gate oxide film 3 by applying a given high voltage between the source-drain diffusion regions 6 and the gate electrode 4 via the contact plugs 8. COPYRIGHT: (C)2009,JPO&INPIT
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