METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can easily suppress the deterioration of characteristics of a semiconductor device caused by the formation of a subtrench. SOLUTION: The method of manufacturing a semiconductor device includes a reactive ion etching step to form grooves in a semiconductor by partly removing the surface of the semiconductor by reactive ion etching, and a small-angle ion milling step to partly remove the bottom of the groove by emitting an ion beam to the bottom of the groove in an inclined direction at a zero degree or higher and 45 degrees or lower with respect to the bottom thereof. COPYRIGHT: (C)2009,JPO&INPIT