| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of solving problems newly caused in forming a wiring layer containing large-width wiring and small-width wiring. SOLUTION: This manufacturing method of a semiconductor device comprises steps for: forming an underlayer insulating film on a semiconductor substrate on which a semiconductor element is formed; forming a wiring groove containing a large-width wiring groove and a small-width wiring groove in the underlayer insulating film to embed a conductor layer and a coating-type inorganic insulating film in the large-width wiring groove, and to embed a conductor layer in the small-width wiring groove; forming an upper layer insulating film covering the coating-type inorganic insulating film; dry-etching via holes in the upper layer insulating film; exposing the coating-type inorganic insulating film in the large-width wiring groove; and wet-etching the coating-type inorganic insulating film at a via hole bottom to remove it. COPYRIGHT: (C)2009,JPO&INPIT
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