| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that the number of process of manufacturing increases in order to suppress voltage drops in a base region. SOLUTION: A plurality of trench regions are formed in a drift region, and a base region is formed in the drift region between the trench regions. A mask is formed in the center section between the trench regions, and ion implantation of impurities is performed so that a first region and a second region may be formed separately from each other. Then, the impurities of the first and second regions are diffused by heat treatment. While the first region and second region are connected, a connecting region which is shallower than the heat-treated first and second regions is formed. After that, the first, second and connecting regions become a source region. The cross-section shape of the base region is in a form of projection upward directly under the connecting region, and the electrical resistance becomes small and voltage drops can be suppressed. COPYRIGHT: (C)2009,JPO&INPIT
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