| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus forming the surface of an SOG layer flatly. SOLUTION: On an interlayer dielectric 2, wiring 3 is formed in a prescribed pattern. On the interlayer dielectric 2 and the wiring 3, an SiOC film 7 is formed along their surfaces. On the SiOC film 7, an SOG layer 8 is formed. The SOG layer 8 allows a part formed on the wiring 3 in the SiOC film 7 to be exposed and has a surface flush with that of the exposed SiOC film 7. COPYRIGHT: (C)2009,JPO&INPIT |
