| 摘要 |
A method for fabricating a semiconductor device, including forming a dielectric film above a substrate; forming a metal containing film above the dielectric film; forming at least one carbon containing film of a silicon carbon containing film containing silicon and carbon and a nitrogen carbon containing film containing nitrogen and carbon above the metal containing film; etching the carbon containing film selectively; etching the metal containing film selectively to transfer an opening of the carbon containing film formed by etching; and etching the dielectric film using the carbon containing film and the metal containing film as masks in a state in which a surface of the carbon containing film other than the opening is exposed.
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