| 发明名称 |
FIELD-EFFECT TRANSISTOR, METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR, DISPLAY DEVICE USING FIELD-EFFECT TRANSISTOR, AND SEMICONDUCTOR DEVICE |
| 摘要 |
<p>Provided is a field-effect transistor wherein an oxide film is arranged as a semiconductor layer, the oxide film has a channel portion, a source portion and a drain portion, and compositions of the channel portion, the source portion and the drain portion, excluding oxygen element and an inert gas, are substantially the same.</p> |
| 申请公布号 |
WO2009093625(A1) |
申请公布日期 |
2009.07.30 |
| 申请号 |
WO2009JP50916 |
申请日期 |
2009.01.22 |
| 申请人 |
IDEMITSU KOSAN CO., LTD.;YANO, KOKI;INOUE, KAZUYOSHI;KAWASHIMA, HIROKAZU;TOMAI, SHIGEKAZU |
发明人 |
YANO, KOKI;INOUE, KAZUYOSHI;KAWASHIMA, HIROKAZU;TOMAI, SHIGEKAZU |
| 分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
| 代理机构 |
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