| 摘要 |
A substrate processing apparatus equipped with a remote plasma reactor for preventing component damage while supplying the active gas of the high temperature is provided to connect a high-capacity remote plasma reactor to the processing chamber. A substrate processing apparatus comprises a remote plasma reactor(11), a radio frequency generator, a processing chamber, and an adapter. The remote plasma reactor activates the process gas provided from the gas source with the plasma production. The operating voltage is supplied the radio frequency generator to the remote plasma reactor. The processing chamber accommodates the active gas provided from the remote plasma reactor. The adapter provides the activity gas supply path to the gas outlet of the remote plasma reactor and gas in of the processing chamber to interval.
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