| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a light electricity generating element, which consistently forms a surface electrode layer from a rear-surface electrode layer at a high speed. <P>SOLUTION: The method of manufacturing a light electricity generating element I having a semiconductor layer 3 for generating electricity through light irradiation has: a rear-surface electrode layer forming step of forming a rear-surface electrode layer 2 on a substrate 1 made of glass; a precursor layer forming step of forming a semiconductor precursor layer 8 on the rear-surface electrode layer 2, the precursor layer which is made up of a plurality of layers and which contains a crystal type of elements different from a crystal type of elements forming the semiconductor layer 3; a front surface electrode layer forming step of forming a front surface electrode layer 5 on the formed semiconductor precursor layer 8; and a precursor layer diffusing step of forming a semiconductor crystal by heating the semiconductor precursor layer 8 after the rear-surface electrode layer forming step, the precursor layer forming step, and the front-surface electrode layer forming step. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
