| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, capable of forming a spacer for improving characteristics of a transistor. SOLUTION: The method of manufacturing the semiconductor device comprises steps of forming a gate insulating film on a semiconductor substrate, forming a gate electrode on the gate insulating film, forming a barrier insulation film containing a high dielectric material on the semiconductor substrate covering a gate, forming a spacer insulation film on the barrier insulation film, and removing the spacer insulation film by anisotropic etching while leaving a spacer on the sidewalls of a gate, removing the exposed barrier insulation film, injecting an impurity to the semiconductor substrate using the gate and the spacer as a mask to form an extension, and further forming sidewalls and forming a source/drain region using the gate, spacer and the sidewalls as a mask. COPYRIGHT: (C)2009,JPO&INPIT
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