| 摘要 |
PROBLEM TO BE SOLVED: To provide a process of producing a semiconductor device capable of processing stepwise the end part of a plurality of laminated layers while reducing the number of times of lithography. SOLUTION: A multilayered wiring layer MWL is formed with a plurality of conductive films and a plurality of insulating films laminated alternately. A multilayered mask film MLM is formed with a plurality of organic films and a plurality of insulating films laminated alternately on the multilayered wiring layer. The insulating film 8 of the uppermost layer and the conductive film 7 of the underlayer are removed out of the multilayered wiring layer using a multilayered mask film. The organic films 11, 9 of the multilayered mask film are slimmed in a direction orthogonal to its film thickness direction. A plurality of the insulating films 8, 6 of the multilayered wiring layer are etched with the slimmed organic film and the etched conductive film of the uppermost layer used as a mask. COPYRIGHT: (C)2009,JPO&INPIT
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