发明名称 PATTERN DEFECT ANALYSIS EQUIPMENT, PATTERN DEFECT ANALYSIS METHOD, AND PATTERN DEFECT ANALYSIS PROGRAM
摘要 PROBLEM TO BE SOLVED: To determine the fatal degree of pattern defects on the surface of a substrate device, with high reliability. SOLUTION: In a pattern defect analyzing apparatus, a data process part 10 acquires a review image including a pattern defect of a substrate device through a defect review part 12 (by a review image acquiring part 104). The review image is compared with a reference image, having no defect for extracting a defect image. An image-aligning part 105 aligns the review image with an own layer design pattern image which is generated from the design data of a layer identical with the region corresponding to the review image. Based on the result of the alignment, other layer design pattern image is generated from the design data of other layer of the region, corresponding to the review image. Based on a composite image of the defect image and the other layer design pattern image, a relative positional relation between the defect and the other layer pattern is acquired; and based on the relative positional relationship, fatal degree is determined (fatal degree determining part 106). COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009170606(A) 申请公布日期 2009.07.30
申请号 JP20080006163 申请日期 2008.01.15
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 SATO NORIO;KOYAMA SUSUMU;SAKAMOTO MASAFUMI;OBARA KENJI
分类号 H01L21/66;G01N21/956 主分类号 H01L21/66
代理机构 代理人
主权项
地址