| 摘要 |
PROBLEM TO BE SOLVED: To continuously perform a recovering process in the same process chamber even after an ashing process that uses hydrogen radical. SOLUTION: In an ashing process, a wafer W is heated to a specified temperature and hydrogen radical is supplied onto the wafer, so that an etching mask is ashed for removal. In a recovery process, the wafer W subjected to the ashing process is supplied with a gas containingβ-diketone compound whose ignition temperature is 300°C or higher, and the quality of a low dielectric constant insulating film damaged by etching is recovered while the low dielectric constant insulating film exposed from a recess is hydrophobized. COPYRIGHT: (C)2009,JPO&INPIT
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