| 摘要 |
In the fine processing of holes and/or trenches by dry-etching an interlayer dielectric film covered with a resist mask formed by ArF-photolithography within a plasma atmosphere, the etching gas used comprises a halogen atom-containing gas (the halogen atom being selected from F, I and/or Br) or a fluorinated carbon atom-containing compound gas in which the ratio of at least one of I and Br is not more than 26% of the total amount of the halogen atoms as expressed in terms of the atomic compositional ratio and the balance of the gas consists of fluorine atoms. Occurrence of striation can be suppressed and a high processing accuracy through etching can be accomplished.
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