发明名称 SELF-REPAIR INTEGRATED CIRCUIT AND REPAIR METHOD
摘要 <p>A method for repairing degraded field effect transistors includes forward biasing PN junctions of one of a source and a drain of a field effect transistor (FET), and a body of the FET. Charge is injected from a substrate to a gate region to neutralize charge in the gate region. The method is applicable to CMOS devices. Repair circuits are disclosed for implementing the repairs.</p>
申请公布号 WO2009094507(A1) 申请公布日期 2009.07.30
申请号 WO2009US31780 申请日期 2009.01.23
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;JOSHI, RAJIV V.;HSU, LOIUS LU-CHEN;WANG, PING-CHUAN;YANG, ZHIJIAN 发明人 JOSHI, RAJIV V.;HSU, LOIUS LU-CHEN;WANG, PING-CHUAN;YANG, ZHIJIAN
分类号 H01L21/337 主分类号 H01L21/337
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