发明名称 FAST GAS SWITCHING PLASMA PROCESSING APPARATUS
摘要 A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power.
申请公布号 KR20090082493(A) 申请公布日期 2009.07.30
申请号 KR20097012509 申请日期 2007.11.12
申请人 LAM RESEARCH CORPORATION 发明人 SADJADI S.M. REZA;HUANG ZHISONG;SAM JOSE TONG;LENZ ERIC H.;DHINDSA RAJINDER
分类号 H01L21/205;H01L21/306 主分类号 H01L21/205
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