| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of preventing the occurrence of burr on dicing to improve the yield of an IC manufacturing. SOLUTION: Metal wirings 31a, 31b, 31c on an uppermost layer are exposed to bring probes into contact, and spaced apart via a gap G substantially parallel to the longitudinal direction of a dicing region 12. The position and the size of the gap G are designed in consideration with a blade thickness and a relative positional difference, and the blade does not intersects any of the metal wirings 31a, 31b, 31c, when the blade passes the dicing region 12. COPYRIGHT: (C)2009,JPO&INPIT
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