| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element capable of reducing influence of piezo polarization, having sufficiently low dislocation density, and having a structure suitable for an industrially-producible GaN wafer. SOLUTION: In this group III nitride semiconductor laser 11, a semiconductor lamination 15 is formed on a principal surface 13a of a substrate 13 formed of a hexagonal n-type gallium nitride. A p-side electrode 17 is formed on a p-type gallium nitride-based semiconductor region 23 of the semiconductor lamination 15. An n-side electrode 19 is formed on the back surface 13b of the substrate 13. The principal surface 13a of the substrate 13 is tilted at an off-angle of 20-45°in the a-axis direction of the gallium nitride from a c-plane of the gallium nitride. When referring to an orthogonal coordinate system Cr, the c-coordinate axis is oriented to the c-axis of the hexagonal n-type gallium nitride of the substrate 13. The angle formed by a crystal axis vector C and the normal N of the principal surface 13a of the substrate 13 is the above off-angle. COPYRIGHT: (C)2009,JPO&INPIT
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