| 摘要 |
PROBLEM TO BE SOLVED: To provide a nickel alloy sputtering target which can form a thermally stable silicide (NiSi) film, and in which the flocculation of the film and surplus siliciding are hard to occur, and the generation of particles is further reduced upon the formation of a sputtered film, and whose uniformity is satisfactory as well, and which is rich in plastic workability to a target, and is particularly useful to the production of a gate electrode material (thin film), and to provide a nickel silicide film formed by the target. SOLUTION: Disclosed is a nickel alloy sputtering target including, by weight, 22 to 46% platinum, one or more components selected from iridium, palladium and ruthenium by 5 to 50 wtppm, and the balance nickel with inevitable impurities. COPYRIGHT: (C)2009,JPO&INPIT
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