| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a transfer method of a metal oxide thin film element for forming a transparent wire having sufficient adhesiveness, high translucency, low resistance, high precision, high reliability, and an insulation property, and satisfying requirements such as a reduced cost, quick delivery, low environmental load and alignment-free. <P>SOLUTION: This circuit formation method is used for selectively transferring a circuit transfer layer 5 and an electrode transfer layer 3 of a transfer body having the circuit transfer layer 5 and the electrode transfer layer 3 formed on a base material 1 to a transfer object 8. The circuit formation method includes processes of: preparing the transfer body with the electrode transfer layer 3 and the circuit transfer layer 5 formed on at least one surface of the base material 1, and the transfer object 8 for transferring the electrode transfer layer 3 and the circuit transfer layer 5 thereto; facing the surface of the circuit transfer layer 5 to the transfer object 8; and selectively transferring the circuit transfer layer 5 and the electrode transfer layer 3 of the transfer body by selectively irradiating laser from the transfer body and/or transfer object 8 side. <P>COPYRIGHT: (C)2009,JPO&INPIT |
