| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor element small in an occupation area, easily manufacturable, and provided with an electrostatic breakdown prevention means. SOLUTION: This optical semiconductor element has electrostatic breakdown prevention element 111a and 111b electrically connected in parallel to a light emitting part formed on a semiconductor substrate 101 and including an active layer 104, and is characterized in that the electrostatic breakdown prevention elements 111a and 111b are provided with a plurality of pin type diodes stacked in a direction vertical to the semiconductor substrate 101, and electrically connected in the same direction, and a tunnel junction is formed on each interface between the pin type diodes adjacent to each other. COPYRIGHT: (C)2009,JPO&INPIT
|
