| 摘要 |
A crystal-growing furnace with a heating improvement structure includes a furnace body, a supporting table, a top heater, and a bottom heater. When the silicon material around the top heater is melted, molten silicon slurry will flow directly into the spacing among particles of the silicon material. This will expedite internal part of the silicon material to absorb energy. As a result, a desirable cycle will be established to expedite melting the whole silicon material in the crucible. The crucible is heated at the bottom thereof by the bottom heater directly so as to enhance efficiency in melting the silicon material in the crucible, and to save energy and time consumed by the crystal-growing furnace. Further, since both of the top and the bottom heaters are symmetrical with one another, the crucible can be heated uniformly. This not only saves energy and makes the heating job convenient, but also saves cost in manufacture.
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