SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor element wherein both high on-current and low off-current are achieved is provided. A method for manufacturing such semiconductor element is also provided. The semiconductor element is provided with a glass substrate (1); an island-shaped semiconductor layer (4) having a first region (4c), a second region (4a) and a third region (4c); a source region (5a) and a drain region (5b); a source electrode (6a); a drain electrode (6b); and a gate electrode (2) which controls conductivity of the first region (4c). An upper surface of the first region (4c) is positioned closer to the glass substrate (1) than upper surfaces of end sections on the side of the first region (4c) in the second region (4a) and the third region (4b). Distances of the semiconductor layer (4) in the thickness direction from the upper surfaces of the end sections of the second region (4a) and the third region (4b) to the upper surface of the first region (4c) are independently one or more times but not more than seven times the thickness of the first region (4b).