发明名称 METHOD FOR MANUFACTURING III METAL NITRIDE SINGLE CRYSTAL
摘要 <p>A template substrate (10A) provided with a substrate main body (1) and a base film (2) is used. The substrate main body has a side surface (1b) and a pair of main surfaces (1a), and the base film is formed on the main surface (1a) and composed of a III metal nitride single crystal. The III metal nitride single crystal (3) is grown at least on one of the main surfaces (1a) of the substrate main body (1) by a liquid phase method. The base film (2) has a protruding figure in planar view. A non-film-formed surface (4) whereupon the base film is not formed surrounds the entire circumference of the base film (2). The III metal nitride single crystal (3) grown from the base film (2) is not brought into contact with the III metal nitride single crystal grown from other base film.</p>
申请公布号 WO2009093753(A1) 申请公布日期 2009.07.30
申请号 WO2009JP51394 申请日期 2009.01.22
申请人 NGK INSULATORS, LTD.;HIRAO, TAKAYUKI;IMAI, KATSUHIRO;ICHIMURA, MIKIYA 发明人 HIRAO, TAKAYUKI;IMAI, KATSUHIRO;ICHIMURA, MIKIYA
分类号 C30B29/38;C30B19/12 主分类号 C30B29/38
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