| 摘要 |
Metal organic chemical vapor deposition equipment (1) is metal organic chemical vapor deposition equipment for forming a film on a substrate (20) by using a reactant gas (G), and includes a susceptor (5) heating the substrate (20) and having a holding surface for holding the substrate (20), and a flow channel (11) for introducing the reactant gas (G) to the substrate (20). The susceptor (5) is rotatable with the holding surface kept facing an inner portion of the flow channel (11), and a height of the flow channel (11) along a flow direction of the reactant gas (G) is kept constant from a position (A3) to a position (S), and is monotonically decreased from the position (S) to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness. |
