| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a production process of a semiconductor device for preventing effectively a decrease in TDDB lifetime of thin-width wiring and SIV in wide-width wiring simultaneously. <P>SOLUTION: The semiconductor device 100 includes a first metal wiring 114, which is formed on a substrate 102 and in an inter-layer insulating film 104 formed on the substrate and contains copper as main component and impurity metal different from the copper, and a second metal wiring 116, which has width larger than that of the first metal wiring and contains copper as main component and impurity metal different from the copper. First wiring metal 112a of the first metal wiring has a concentration profile, in which concentration of impurity metal becomes lower from the surface to its center of the interior. The concentration of the impurity metal on the surface is higher than that of the impurity metal on the surface of a second wiring metal 112b of the second metal wiring. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
