| 摘要 |
PROBLEM TO BE SOLVED: To provide a single-crystal silicon wafer small in crystal defects of a surface layer part, high in surface layer strength, and suitable for a substrate for highly-integrated device. SOLUTION: In this single-crystal silicon wafer, COP density of the surface layer part at a depth of 3μm from at least one surface is not larger than 2 pcs/cm<SP>2</SP>. The maximum peak of oxygen concentration in the depth direction of the surface layer part is located in a region at the depth of 1μm from the surface. This manufacturing method of a single-crystal silicon wafer includes: heat-treating a wafer-like single-crystal silicon material in a hydrogen and/or rare gas atmosphere, and carrying out a temperature-raising/lowering process of raising the temperature of the wafer-like single-crystal silicon material after the heat treatment to 1,100-1,300°C in an oxidizing atmosphere, and then lowering the temperature. In the temperature lowering, the temperature lowering up to 900°C is carried out at a temperature-lowering speed not smaller than 10°C/sec. COPYRIGHT: (C)2009,JPO&INPIT
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