发明名称 METHODS FOR FABRICATING COMPOUND MATERIAL WAFERS
摘要 Methods are disclosed for preparing a reconditioned donor substrate by providing a remainder substrate from a donor substrate wherein the remainder substrate has a detachment surface where a transfer layer was detached and an opposite surface; and depositing an additional layer onto the opposite surface of the remainder substrate to increase its thickness and to form a reconditioned substrate. The reconditioned substrate is recycled as a donor substrate for fabricating compound material wafers.
申请公布号 US2009191719(A1) 申请公布日期 2009.07.30
申请号 US20090415085 申请日期 2009.03.31
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 DUPONT FREDERIC
分类号 H01L21/31 主分类号 H01L21/31
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