发明名称 NAND FLASH CONTENT ADDRESSABLE MEMORY
摘要 NAND architecture non-volatile content addressable (CAM) memory devices and methods are described that allows for high density, low cost CAM devices. In addition, the NAND architecture non-volatile CAM memory operates with reduced power consumption characteristics for low power and portable applications. In one NAND architecture non-volatile CAM memory embodiment a wired NOR match line array is utilized. In another embodiment a NAND match line array is shown. In yet other embodiments, hierarchal addressing, hash addressing, tree search and algorithmic/hardware engine based search is detailed utilizing both conventional NAND architecture non-volatile Flash memory arrays and dedicated NAND architecture CAM arrays utilizing wired NOR and wired NAND match lines.
申请公布号 US2009190404(A1) 申请公布日期 2009.07.30
申请号 US20080020110 申请日期 2008.01.25
申请人 ROOHPARVAR FRANKIE F 发明人 ROOHPARVAR FRANKIE F.
分类号 G11C16/04;G11C15/00 主分类号 G11C16/04
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