| 摘要 |
A piezoelectric thin film device according to the present invention comprises a lower electrode, a piezoelectric thin film and a upper electrode, in which the piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0 <x<1), and in which a (001)KNN plane diffraction peak of the piezoelectric thin film indicates an angle 2theta from 22.1° to 22.5° in an X-ray diffraction 2theta/theta measurement to a surface of the piezoelectric thin film, and the (001)KNN plane diffraction peak occupies 80% or more of diffraction peaks of the piezoelectric thin film.
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