| 摘要 |
The transistor has gate-oxides (60, 60`, 60``), and a polycrystalline layer (40) applied on the gate oxide (60). Spacers (51, 53) are conductively connected with the polycrystalline layer, where the spacers are made from polycrystalline silicone. The gate oxide (60) has a thickness in one area below the polycrystalline layer and the gate oxides (60`, 60``) have thickness in areas below the respective spacers (51, 53). The thickness of the gate oxides (60`, 60``) in the latter areas is reduced compared with the thickness of the gate oxide (60) in the former area. An independent claim is also included for a method of manufacturing a field effect transistor. |
