发明名称 THIN FILM LAMINATED BODY, THIN FILM MAGNETIC SENSOR USING THE THIN FILM LAMINATED BODY AND METHOD FOR MANUFACTURING THE THIN FILM LAMINATED BODY
摘要 <p>Provided is a thin film laminated body to have a thin film conductive layer having high electron mobility and sheet resistance as an InAsSb operation layer. A thin film magnetic sensor using such thin film laminated body and a method for manufacturing such thin film laminated body are also provided. The thin film laminated body is provided with an AlXIn1-XSb mixed crystal layer arranged on a substrate, and an InAsXSb1-X (0<X<=1) thin film conductive layer arranged on the AlXIn1-XSb layer by being brought into direct contact with the layer. The AlXIn1-XSb mixed crystal layer exhibits resistance higher than that of the InAsXSb1-X thin film conductive layer or insulating characteristics or p-type conductivity, a band gap larger than that of the InAsXSb1-X thin film conducive layer and a lattice mismatch within a range of +1.3% to-0.8%.</p>
申请公布号 KR20090082425(A) 申请公布日期 2009.07.30
申请号 KR20097010548 申请日期 2007.11.29
申请人 ASAHI KASEI KABUSHIKI KAISHA 发明人 SHIBASAKI ICHIRO;GEKA HIROTAKA;OKAMOTO ATSUSHI
分类号 H01L43/06;G01R33/07;G01R33/09;H01L43/08 主分类号 H01L43/06
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